sm-8 bipolar transistor h-bridge preliminary data sheet issue b july 1997 features * compact package * low on state losses * low drive requirements * operates up to 40v supply * 2 amp continuous rating partmarking detail ? ZHB6790 absolute maximum ratings. parameter symbol npns pnps unit collector-base voltage v cbo 50 -50 v collector-emitter voltage v ceo 40 -40 v emitter-base voltage v ebo 5-5 v peak pulse current i cm 6-6 a continuous collector current i c 2-2 a operating and storage temperature range t j :t stg -55 to +150 c schematic diagram connection diagram ZHB6790 1 2 3 4 8 7 6 5 c 1, c 2 e 1 ,e 4 c 3 ,c 4 b 4 b 1 b 2 e 2 ,e 3 b 3 sm-8 (8 lead sot223) q2 q3 q4 q1 b1 b2 b4 b3 e2, e3 e1, e4 c1, c2 c3, c4
thermal characteristics parameter symbol value unit total power dissipation at t amb = 25c* any single transistor ?on? q1 and q3 ?on? or q2 and q4 ?on? equally p tot 1.25 2 w w derate above 25c* any single transistor ?on? q1 and q3 ?on? or q2 and q4 ?on? equally 10 16 mw/ c mw/ c thermal resistance - junction to ambient* any single transistor ?on? q1 and q3 ?on? or q2 and q4 ?on? equally 100 62.5 c/ w c/ w ZHB6790 100us pulse width transient thermal resistance 0 d=1 d=0.2 d=0.1 d=0.05 d=0.5 single pulse d=t1 tp t1 tp 1ms 10ms 100ms 1s 10s 100s 20 40 60 80 100 single pulse transient thermal resistance pulse width t1 1ms 100us 0 10ms tp d=t1 tp 1s 100ms d=0.2 d=0.05 d=0.1 10s d=0.5 d=1 100s 10 20 30 40 50 60 t - temperature (c) 0 0.5 020 1.5 1.0 2.0 derating curve 40 60 80 100 140 120 160 single transistor "on" q1 and q3 or q2 and q4 "on" pd v pcb area comparison 0.1 0.1 10 pcb area (inches squared) 110 1 dual transistors ? single transistor dual transistors ? single transistor full copper minimum copper * the power which can be dissipated assuming the device is mounted in a typical manner on a pcb with copper equal to 2 inches square. ?"two devices on" is the standard operating condition for the bridge. eg. opposing npn/pnp pairs rurned on.
pnp transistors electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -40 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cutoff current i cbo -0.1 m a v cb =-30v emitter cutoff current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.14 -0.25 -0.45 -0.75 v v v v i c =-100ma, i b =-0.5ma* i c =-500ma, i b =-5ma* i c =-1a, i b =-10ma* i c =-2a, i b =-50ma* base-emitter saturation voltage v be(sat) -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 200 150 i c =-100ma, v ce =-2v i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 24 pf v cb =-10v, f=1mhz switching times t on t off 35 600 ns i c =-500ma, i b1 = -50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%. ZHB6790
npn transistors electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 50 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 40 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cutoff current i cbo 0.1 m a v cb =35v emitter cutoff current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.1 0.16 0.5 0.35 v v v v i c =100ma, i b =0.5ma* i c =500ma, i b =2.5ma* i c =1a, i b =5ma* i c =2a, i b =30ma* base-emitter saturation voltage v be(sat) 0.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 0.73 v i c =1a, v ce =2v* static forward current transfer ratio h fe 500 400 150 i c =100ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 16 pf v cb =10v, f=1mhz switching times t on t off 33 1300 ns i c =500ma, i b! =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%. ZHB6790
pnp transistor typical characteristics 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v ce(sat) v i c i c - collector current (amps) v - (v olts) v ce(sat) v i c i c - collector current (amps) v - ( v ol ts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - norm ali sed ga in v - ( v ol ts) 750 500 250 h - t ypi cal gai n t amb =25c -55c +25c +100c 0 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (vol ts) -55c +25c +100c 1.8 1.4 1.2 1.0 0.4 0.2 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =10 i c /i b =100 i c /i b =40 i c /i b =100 v ce =2v i c /i b =100 v ce =2v -55c +25c +100c +100c +25c -55c ZHB6790
npn transistor typical characteristics ZHB6790 -55c +25c +100c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v ce(sat) v i c i c - collector current (amps) v - (v olts) v ce(sat) v i c i c - collector current (amps) v - ( v ol ts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - norm ali sed ga i n v - (v olts) v - ( v olts) v ce =2v v ce =2v 1.5k 1k 500 h - t ypi cal gai n t amb =25c i c /i b =100 -55c +25c +100c 0 0 -55c +25c +100c i c /i b =100 i c /i b =10 i c /i b =200 i c /i b =100
ZHB6790 100m 100 1s 100ms 10 dc 10m v ce - collector emitter voltage (v) safe operating area (full copper) 10ms 1ms 100s 110 100m 1 100m 100 1s 100ms 10 dc 10m vce - collector emitter voltage (v) safe operating area (minimum copper) 10ms 1ms 100s 110 100m 1 see note below see note below zetex h bridge npn transistors spice model last revision 4/7/97 .model h6790n npn is =2.505e-12 nf =1.0058 bf =1360 ikf=1.3 vaf=35 +ise=.24e-12 ne =1.38 nr =1.001 br =125 ikr=1 var=8 isc=.435e-12 +nc =1.213 rb =.2 re =.043 rc =.04 cjc=54.3e-12 mjc=.475 vjc=.765 +cje=247e-12 tf =.851e-9 tr =15.7e-9 * * *zetex h bridge pnp transistors spice model last revision 4/7/97 .model h6790p pnp is=1.09684e-12 nf=1.0102 bf=650 ikf=1.7 vaf=23.5 +ise=9.88593e-14 ne=1.47256 nr=1.00391 br=270 ikr=0.2 var=30 +isc=5.4933e-14 nc=1.07427 rb=0.055 re=0.049 rc=0.078 cjc=96e-12 +mjc=0.495 vjc=0.67 cje=275e-12 tf=0.75e-9 tr=10.8e-9 * (c) 1997 zetex plc the copyright in these models and the design embodied belong to zetex plc (?zetex?). they are supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the models are believed accurate but no condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. zetex plc, fields new road, chadderton, safe operating area note: the safe operating area (soa) charts shown are a combination of the worst case secondary breakdown characteristics for the npn/pnp pair, and the thermal curves demonstrating the power dissipation capability of the energised zhb part (opposing npn-pnp switched on) when mounted on a 50mm x 50mm fr4 pcb. the two cases show: i) full copper present and ii) with minimal copper present - this being defined as an sm-8 footprint with 1.5mm tracks to the edge of the pcb. for example, on a 50mm x 50mm full copper pcb, the ZHB6790 will safely dissipate 2w under dc conditions, taking note of continuous current ratings and voltage limits. higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100 m s and 1ms) being relevant for assessment of switching conditions. the ZHB6790 ?h?-bridge can be modelled within spice using the following transistor models configured in the standard ?h?-bridge topology, as shown in the schematic diagram of this datasheet.
he e d b e1 lp 45 o 3 c 1 2 3 4 8 7 6 5 e2 a a1 dim millimetres inches min typ max min typ max a ? ? 1.7 ? ? 0.067 a1 0.02 ? 0.1 0.0008 ? 0.004 b ? 0.7 ? ? 0.028 ? c 0.24 ? 0.32 0.009 ? 0.013 d 6.3 ? 6.7 0.248 ? 0.264 e 3.3 ? 3.7 0.130 ? 0.145 e1 ? 4.59 ? ? 0.180 ? e2 ? 1.53 ? ? 0.060 ? he 6.7 ? 7.3 0.264 ? 0.287 lp 0.9 ? ? 0.035 ? ? zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. ZHB6790
|
